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high voltage hall effect latch ah278 1 feb. 2007 rev. 1. 1 bcd semiconductor manufacturing limited data sheet general description the ah278 is an integrated hall sensor with output driver designed for electronic commutation of brush- less dc motor applications. the device includes an on- chip hall sensor for magnetic sensing, an amplifier that amplifies the hall voltage, a schmitt trigger to provide switching hysteresis for noise rejection and two complementary open-coll ector drivers for sinking large load current. it also includes an internal band-gap regulator which is used to provide bias voltage for internal circuits and allows a wide operating supply voltage ranges. placing the device in a variable magnetic field, if the magnetic flux density is larger than threshold b op , the pin do will be turned low (on) and pin dob will be turned high (off). this output state is held until the magnetic flux density reverses and falls below b rp, then causes do to be tu rned high (off) and dob turned low (on). ah278 is available in to-94 (sip-4l) package. features on-chip hall sensor 4v to 30v supply voltage 500ma (avg) output sink current build in protection diode for reverse power connecting -20 o c to 85 o c operating temperature low profile to-94 (sip-4l) package build in over temperature protection function esd rating: 300v(machine model) applications 12v/24v dual-coil brushless dc motor/fan power supply and switchboard communications facilities industrial equipment figure 1. package type of ah278 to-94
high voltage hall effect latch ah278 2 feb. 2007 rev. 1. 1 bcd semiconductor manufacturing limited data sheet figure 2. pin configuration of ah278 (top view) (to-94) pin configuration z4 package gnd dob do v cc pin description pin number pin name function 1 v cc supply voltage 2 do output 1 3 dob output 2 4 gnd ground 1 2 3 4
high voltage hall effect latch ah278 3 feb. 2007 rev. 1. 1 bcd semiconductor manufacturing limited data sheet functional block diagram figure 3. functional block diagram of ah278 package temperature range part number marking id packing type to-94 -20 to 85 o c ah278z4-ae1 ah278z4-e1 bulk ah278z4-be1 ah278z4-e1 bulk bcd semiconductor's pb-free products, as designated with "e1" suffix in th e part number, are rohs compliant. ordering information circuit type package z4: to-94 (sip-4l) e1: lead free ah278 - magnetic characteristics a: 10 to 70gauss b: 100gauss regulator over-temperature protection hall sensor amplifier schmitt trigger output driver do dob v cc gnd 1 2 3 4
high voltage hall effect latch ah278 4 feb. 2007 rev. 1. 1 bcd semiconductor manufacturing limited data sheet parameter symbol value unit supply voltage v cc 30 v reverse protection voltage v rcc -30 v magnetic flux density b unlimited gauss output current continuous i o 500 (note 2) ma hold 600 ma peak (start up) 800 ma power dissipation p d 550 mw thermal resistance die to atmosphere ja 227 o c/w die to package case jc 49 o c/w storage temperature t stg -50 to 150 o c esd (machine model) 300 v note 1: stresses greater than those li sted under "absolute maximu m ratings" may cause permanen t damage to the device. these are stress ratings only, and functiona l operation of the device at these or any other conditions beyond those indicated under "recommended operating conditions" is not implied. "absolut e maximum ratings" for exte nded period may affect device reliability. note 2: continuos output current is 300ma at 85 o c. parameter symbol min max unit supply voltage v cc 428v operating ambient temperature t a -20 85 o c recommended operating conditions absolute maximum ratings (note 1) (t a =25 o c)
high voltage hall effect latch ah278 5 feb. 2007 rev. 1. 1 bcd semiconductor manufacturing limited data sheet parameter symbol test condition min typ max unit low supply voltage v ce v cc =5v, i o =100ma 0.1 0.3 v output saturation voltage v sat 1i o =500ma 0.5 0.8 v output saturation voltage v sat 2i o =300ma 0.25 0.5 v output leakage current i ol v do ,v dob =24v 0.1 10 a supply current i cc v cc =24v, output open 12.5 16 ma output rise time tr r l =820 ? , c l =20pf 3.0 10 s output fall time tf r l =820 ? , c l =20pf 0.3 1.5 s switch time differential ? tr l =820 ? , c l =20pf 3.0 10 s output zener breakdown voltage v zo 60 v (t a =25 o c, v cc =24v, unless otherwise specified) electrical characteristics parameter symbol grade min typ max unit operating point b op a10 70gauss b 100 gauss releasing point b rp a-70 -10gauss b -100 gauss hysteresis b hys 80 gauss magnetic characteristics (t a =25 o c) v do (v) high low b hys v sat 0 s n b rp b op off-state on-state turn off turn on magnetic flux density (gauss)
high voltage hall effect latch ah278 6 feb. 2007 rev. 1. 1 bcd semiconductor manufacturing limited data sheet figure 4. basic test circuit magnetic characteristics (continued) n s marking side figure 5. v do vs. magnetic flux density figure 6. v dob vs. magnetic flux density -40 -20 0 20 40 2 4 6 8 10 12 14 16 dob (v) v sat v cc magnetic flux density b (gauss) -40 -20 0 20 40 2 4 6 8 10 12 14 16 do (v) v sat v cc magnetic flux density b (gauss) ah 278 v cc do dob gnd 12 3 4 +2 4v do (v out1 ) dob (v out2 ) r1 r2 820 ? 820 ? c1 c2 20pf 20pf
high voltage hall effect latch ah278 7 feb. 2007 rev. 1. 1 bcd semiconductor manufacturing limited data sheet typical performance characteristics figure 9. b op /b rp /b hys vs. ambient temperature figure 8. b op /b rp /b hys vs. v cc figure 10. p d vs. ambient temperature figure 7. i cc vs. v cc -25 0 25 50 75 100 125 150 0 200 400 600 800 p d (mw) t a ( o c) 0 5 10 15 20 25 0 2 4 6 8 10 12 14 i cc (ma) v cc (v) t a =25 o c 510152025 -40 -20 0 20 40 60 80 b op /b rp /b hys (gs) v cc (v) b op b rp b hys t a =25 o c -20 0 20 40 60 80 -60 -40 -20 0 20 40 60 80 b op /b rp /b hys (gs) t a ( o c) b op b rp b hys v cc =24v
high voltage hall effect latch ah278 8 feb. 2007 rev. 1. 1 bcd semiconductor manufacturing limited data sheet typical performance characteristics (continued) figure 12. v sat vs. ambient temperature figure 11. i cc vs. ambient temperature -20 0 20 40 60 80 0 50 100 150 200 250 300 350 400 v sat (mv) t a ( o c) v cc =24v i o =300ma -20 0 20 40 60 80 7 8 9 10 11 12 13 icc (ma) t a ( o c) v cc =4v v cc =14v v cc =24v
high voltage hall effect latch ah278 9 feb. 2007 rev. 1. 1 bcd semiconductor manufacturing limited data sheet typical applications ah27 8 v cc do dob gnd 12 3 4 coil1 coil2 v cc d1 z2 z1 r1 figure 13. typical application circuit with d1 z1, z2: zener diode, 2*v cc v z 60v r1: r1 < ( v cc -5.5v)/16ma, 0.5w (note 3) note 3: recommended r1 for different v cc v cc (v) 7 8 9 1011121314151617 r1 ( ? ) 000000470510560620680 v cc (v) 18 19 20 21 22 23 24 25 26 27 28 r1 ( ? ) 750 820 820 910 1k 1k 1.1k 1.2k 1.2k 1.3k 1.3k
high voltage hall effect latch ah278 10 feb. 2007 rev. 1. 1 bcd semiconductor manufacturing limited data sheet mechanical dimensions unit: mm(inch) to-94 hall sensor location 3.780(0.149) 4.080(0.161) 0.500(0.020) 0.700(0.028) 1.400(0.055) 1.800(0.071) 0.700(0.028) 0.900(0.035) 0.360(0.014) 0.510(0.020) 4.980(0.196) 5.280(0.208) 1.250(0.050) 1.850(0.073) 0.380(0.015) 0.550(0.022) 0.360(0.014) 0.500(0.020) 14.900(0.587) 15.300(0.602) 1.270(0.050) typ 3.710(0.146) 3.910(0.154) 45 typ
important notice bcd semiconductor manufacturing limite d reserves the right to make changes without further notice to any products or specifi- cations herein. bcd semiconductor manufacturing limited does not as sume any responsibility for us e of any its products for any particular purpose, nor does bcd semiconductor manufacturi ng limited assume any liability aris ing out of the application or use of any its products or circui ts. bcd semiconductor manufacturing limited does not convey any license under its patent rights or other rights nor the rights of others. - wafer fab shanghai sim-bcd semiconductor manufacturing limited 800, yi shan road, shanghai 200233, china tel: +86-21-6485 1491, fax: +86-21-5450 0008 bcd semiconductor manufacturing limited main site regional sales office shenzhen office shanghai sim-bcd semiconductor manuf acturing co., ltd. shenzhen office advanced analog circuits (shanghai) corporation shenzhen office room e, 5f, noble center, no.1006, 3rd fuzhong road, futian district, shenzhen 518026, china tel: +86-755-8826 7951 fax: +86-755-8826 7865 taiwan office bcd semiconductor (taiwan) company limited 4f, 298-1, rui guang road, nei-hu district, taipei, taiwan tel: +886-2-2656 2808 fax: +886-2-2656 2806 usa office bcd semiconductor corporation 30920 huntwood ave. hayward, ca 94544, u.s.a tel : +1-510-324-2988 fax: +1-510-324-2788 - ic design group advanced analog circuits (shanghai) corporation 8f, zone b, 900, yi shan road, shanghai 200233, china tel: +86-21-6495 9539, fax: +86-21-6485 9673 bcd semiconductor manufacturing limited http://www.bcdsemi.com

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